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Product Category : MOSFET
Vgs (Max) : ±20V
Current - Continuous Drain (Id) @ 25°C : 22A (Ta), 100A (Tc)
FET Type : N-Channel
Mounting Type : Surface Mount
Gate Charge (Qg) (Max) @ Vgs : 65nC @ 10V
Manufacturer : Infineon Technologies
Minimum Quantity : 1
Drive Voltage (Max Rds On, Min Rds On) : 10V
Operating Temperature : -55°C ~ 150°C (TJ)
FET Feature : -
Series : HEXFET®
Input Capacitance (Ciss) (Max) @ Vds : 2460pF @ 25V
Supplier Device Package : PQFN (5x6)
Part Status : Obsolete
Packaging : Cut Tape (CT)
Rds On (Max) @ Id, Vgs : 4.3 mOhm @ 50A, 10V
Power Dissipation (Max) : 3.6W (Ta), 105W (Tc)
Package / Case : 8-VQFN Exposed Pad
Technology : MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id : 4V @ 100µA
Drain to Source Voltage (Vdss) : 40V
Description : MOSFET N-CH 40V 22A PQFN
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