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CSD25202W15

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CSD25202W15

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 1.05V @ 250µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : 9-UFBGA, DSBGA

Gate Charge (Qg) (Max) @ Vgs : 7.5 nC @ 4.5 V

Rds On (Max) @ Id, Vgs : 26mOhm @ 2A, 4.5V

FET Type : P-Channel

Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 20 V

Vgs (Max) : -6V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 1010 pF @ 10 V

Mounting Type : Surface Mount

Series : NexFET™

Supplier Device Package : 9-DSBGA

Mfr : Texas Instruments

Current - Continuous Drain (Id) @ 25°C : 4A (Ta)

Power Dissipation (Max) : 500mW (Ta)

Technology : MOSFET (Metal Oxide)

Base Product Number : CSD25202

Description : MOSFET P-CH 20V 4A 9DSBGA

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P-Channel 20 V 4A (Ta) 500mW (Ta) Surface Mount 9-DSBGA

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